Defects and Nanocrystals Generated by Si Implantation into a-SiO2
نویسندگان
چکیده
Electrical charge-trapping characteristics have been studied in thermal oxides that were implanted with Si, experimentally using electron spin resonance (ESR), capacitance versus voltage (CV) measurements, transmission electron microscopy (TEM), atomic force microscopy (AFM), and theoretically with Density Functional Theory (DFT) using plane waves. Our study examines possible defect structures associated with excess Si in thermal oxides.
منابع مشابه
Depth distribution of luminescent Si nanocrystals in Si implanted SiO2 films on Si
Depth-resolved measurements of the photoluminescence of Si implanted and annealed SiO2 films on Si have been performed to determine the depth distribution of luminescent Si nanocrystals. Si nanocrystals with diameters ranging from ;2 to 5 nm were formed by implantation of 35 keV Si ions into a 110-nm-thick thermally grown SiO2 film on Si~100! at a fluence of 6310 16 Si/cm, followed by a thermal...
متن کاملInvited Review Paper STRUCTURAL AND OPTICAL PROPERTIES OF Si AND Ge NANOCRYSTALS EMBEDDED IN SiO2 MATRIX BY ION IMPLANTATION
It has been recently established that upon annealing at high temperatures impurity atoms implanted into SiO2 matrix precipitate and form crystal islands with nanometer size. These nanostructures are expected to have interesting electrical and optical properties which can be utilized in the production of new optoand micro-electronic devices. In this work, properties of Ge and Si nanocrystals for...
متن کاملTuning the emission wavelength of Si nanocrystals in SiO2 by oxidation
Si nanocrystals ~diameter 2–5 nm! were formed by 35 keV Si implantation at a fluence of 6 310 Si/cm into a 100 nm thick thermally grown SiO2 film on Si ~100!, followed by thermal annealing at 1100 °C for 10 min. The nanocrystals show a broad photoluminescence spectrum, peaking at 880 nm, attributed to the recombination of quantum confined excitons. Rutherford backscattering spectrometry and tra...
متن کاملExciton–erbium interactions in Si nanocrystal-doped SiO2
The presence of silicon nanocrystals in Er doped SiO2 can enhance the effective Er optical absorption cross section by several orders of magnitude due to a strong coupling between quantum confined excitons and Er. This article studies the fundamental processes that determine the potential of Si nanocrystals as sensitizers for use in Er doped waveguide amplifiers or lasers. Silicon nanocrystals ...
متن کاملLuminescent Si Nanocrystals Synthesized by Si Ion Implantation and Reactive Pulsed Laser Deposition: The Effects of RTA, Excimer-UV and E-Beam Irradiation
Si ion implantation was widely used to synthesize specimens of SiO2 containing supersaturated Si and subsequent high temperature annealing induces the formation of embedded luminescent Si nanocrystals. In this work, the potentialities of excimer UV-light (172 nm, 7.2 eV) irradiation and rapid thermal annealing (RTA) to enhance the photoluminescence and to achieve low temperature formation of Si...
متن کامل